Published 2008 | Version v1
Miscellaneous Open

Defect-impurity complexes with high thermal stability in epi-Si n+-p diodes irradiated with MeV electrons

  • 1. Scientific-Practical Materials Research Centre NAS of Belarus, Minsk (Belarus)

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no abstract available

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Programme and abstracts of the seventh International Conference on Ion Implantation and other Applications of Ions and Electrons (ION 2008)

Additional details

Publishing Information

Publisher
Maria Curie-Sklodowska University, Lublin
Imprint Place
Lublin (Poland)
Imprint Title
Programme and abstracts of the seventh International Conference on Ion Implantation and other Applications of Ions and Electrons (ION 2008)
Imprint Pagination
186 p.
Journal Page Range
p. 90
Report number
INIS-PL--2009-0011

Conference

Title
7. International Conference on Ion Implantation and other Applications of Ions and Electrons
Acronym
ION 2008
Dates
16-19 Jun 2008
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
40107962
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference
Descriptors DEI
ANNEALING; BORON OXIDES; CARBON OXIDES; DEFECTS; ELECTRICAL PROPERTIES; ELECTRON BEAMS; EXTERNAL IRRADIATION; SILICONES
Descriptors DEC
BEAMS; BORON COMPOUNDS; CARBON COMPOUNDS; CHALCOGENIDES; HEAT TREATMENTS; IRRADIATION; LEPTON BEAMS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PHYSICAL PROPERTIES; POLYMERS; SILOXANES

Optional Information

Notes
2 refs.