Published 2008
| Version v1
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Defect-impurity complexes with high thermal stability in epi-Si n+-p diodes irradiated with MeV electrons
- 1. Scientific-Practical Materials Research Centre NAS of Belarus, Minsk (Belarus)
Description
no abstract available
Files
40107962.pdf
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(39.3 kB)
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Additional details
Publishing Information
- Publisher
- Maria Curie-Sklodowska University, Lublin
- Imprint Place
- Lublin (Poland)
- Imprint Title
- Programme and abstracts of the seventh International Conference on Ion Implantation and other Applications of Ions and Electrons (ION 2008)
- Imprint Pagination
- 186 p.
- Journal Page Range
- p. 90
- Report number
- INIS-PL--2009-0011
Conference
- Title
- 7. International Conference on Ion Implantation and other Applications of Ions and Electrons
- Acronym
- ION 2008
- Dates
- 16-19 Jun 2008
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 40107962
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- ANNEALING; BORON OXIDES; CARBON OXIDES; DEFECTS; ELECTRICAL PROPERTIES; ELECTRON BEAMS; EXTERNAL IRRADIATION; SILICONES
- Descriptors DEC
- BEAMS; BORON COMPOUNDS; CARBON COMPOUNDS; CHALCOGENIDES; HEAT TREATMENTS; IRRADIATION; LEPTON BEAMS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PHYSICAL PROPERTIES; POLYMERS; SILOXANES
Optional Information
- Notes
- 2 refs.