Published 1998
| Version v1
Miscellaneous
Molecular beam epitaxy in InxGa1-xN using NH3
Creators
- 1. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, CRHEA-CNRS, Valbonne (France)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- thin films
Publishing Information
- Imprint Title
- Abstracts of The Third European GaN Workshop EGW-3
- Imprint Pagination
- 97 p.
- Journal Page Range
- p. 81
Conference
- Title
- 3. European GaN Workshop EGW-3
- Dates
- 22-24 Jun 1998
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31064589
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- AMMONIA; CHEMICAL COMPOSITION; ELECTRON DIFFRACTION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MEETINGS; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EMISSION; EPITAXY; HYDRIDES; HYDROGEN COMPOUNDS; LUMINESCENCE; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; PHOTON EMISSION; PNICTIDES; SCATTERING