Published 2012
| Version v1
Journal article
Optimization of a silicon pixel sensor for the European XFEL by means of TCAD simulations
- 1. Institut fuer Experimentalphysik, Universitaet Hamburg (Germany)
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Optimierung eines Silizium-Pixelsensors fuer den European XFEL mit Hilfe von TCAD Simulationen
Identifiers
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Issue
- Goettingen 2012 issue
- Series
- Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 47(1)
- Journal Page Range
- [1 p.]
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- 2012 DPG Spring meeting with the divisions of gravitation and theory of relativity, particle physics, theoretical and mathematical fundamentals of the physics
- Original Conference Title
- DPG-Fruehjahrstagung 2012 der Fachverbaende Gravitation und Relativitaetstheorie, Teilchenphysik, Theoretische und Mathematische Grundlagen der Physik
- Dates
- 27 Feb - 2 Mar 2012
- Place
- Goettingen (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 44066470
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- COMPUTER-AIDED DESIGN; COMPUTERIZED SIMULATION; JUNCTION DETECTORS; OPTIMIZATION; PHYSICAL RADIATION EFFECTS; P-N JUNCTIONS; POSITION SENSITIVE DETECTORS; SI SEMICONDUCTOR DETECTORS; THICKNESS; X RADIATION
- Descriptors DEC
- DESIGN; DIMENSIONS; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; MEASURING INSTRUMENTS; RADIATION DETECTORS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS; SIMULATION
Optional Information
- Notes
- Session: T 66.1 Do 16:45