Published April 1, 2006
| Version v1
Journal article
Identification of divacancies in 4H-SiC
Creators
- 1. Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)
- 2. Graduate School of Library, Information and Media Studies, RCKC, University of Tsukuba, Tsukuba 305-8550 (Japan)
- 3. Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, H-1111 Budapest (Hungary)
- 4. Lehrstuhl fuer Theoretische Festkoerperphysik, Unversitaet Erlangen-Nuernberg, Staudtstr. 7B2, D-91058 Erlangen (Germany)
- 5. Norstel AB, Hans Meijers vaeg 2, SE-580 30 Linkoeping (Sweden)
- 6. Japan Atomic Energy Research Institute, Takasaki 370-1292 (Japan)
Description
The P6/P7 centers in 4H-SiC were studied by electron paramagnetic resonance (EPR) and ab initio supercell calculations. The hyperfine coupling constants of C and Si neighbors obtained by EPR are in good agreement with the calculated values for the neutral divacancy, VCVSi0. Our results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy-carbon antisite pairs in the double positive charge state (VCCSi2+), are related to the triplet ground states of the C3v/C1h configurations of VCVSi0
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2005.12.086;
- PII
- S0921-4526(05)01474-2;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 376-377
- Journal Page Range
- p. 334-337
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 23. international conference on defects in semiconductors
- Dates
- 24-29 Jul 2005
- Place
- Awaji Island (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37073134
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARBON; CHARGE STATES; COUPLING CONSTANTS; ELECTRON SPIN RESONANCE; GROUND STATES; SILICON CARBIDES; TRIPLETS; VACANCIES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY LEVELS; MAGNETIC RESONANCE; MULTIPLETS; NONMETALS; POINT DEFECTS; RESONANCE; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.