Published 1996
| Version v1
Book
Performance of a double-sided silicon microstrip detector with a wide-pitch N-side readout using a field-plate and a multi P-stop structure
Description
The previous prototype of the double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by oxide-nitride-oxide (ONO) dielectric film showed band-to-band tunneling (BBT) current at the field-plate structure for the N+ strip, which represented a limitation to the biasing configuration. We report improved characteristics of the modified field-plate structure and the wide-pitch n-side readout using a multi p-stop structure combined thereon
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (United States)
- Imprint Title
- 1996 IEEE nuclear science symposium - conference record. Volumes 1, 2 and 3
- Imprint Pagination
- 2138 p.
- Journal Page Range
- p. 181-185.
Conference
- Title
- Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference.
- Dates
- 2-9 Nov 1996.
- Place
- Anaheim, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28068250
- Subject category
- S43: PARTICLE ACCELERATORS; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- B MESONS; DESIGN; MESON FACTORIES; PERFORMANCE; READOUT SYSTEMS; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- ACCELERATORS; BEAUTY MESONS; BEAUTY PARTICLES; BOSONS; ELEMENTARY PARTICLES; HADRONS; MEASURING INSTRUMENTS; MESONS; PSEUDOSCALAR MESONS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS
Optional Information
- Secondary number(s)
- CONF-961123--.