Published June 16, 2014 | Version v1
Journal article

Dramatic enhancement of fullerene anion formation in polymer solar cells by thermal annealing: Direct observation by electron spin resonance

  • 1. Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
  • 2. National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan)
  • 3. Tsukuba Research Center for Interdisciplinary Materials Science (TIMS), University of Tsukuba, Tsukuba, Ibaraki 305-8571 (Japan)
  • 4. Japan Science and Technology Agency (JST), PRESTO, Kawaguchi, Saitama 322-0012 (Japan)

Description

Using electron spin resonance (ESR), we clarified the origin of the efficiency degradation of polymer solar cells containing a lithium-fluoride (LiF) buffer layer created by a thermal annealing process after the deposition of an Al electrode (post-annealing). The device structure was indium-tin-oxide/ poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate)/poly (3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM)/LiF/Al. Three samples consisting of quartz/P3HT:PCBM/LiF/Al, quartz/P3HT:PCBM/Al, and quartz/PCBM/LiF/Al were investigated and compared. A clear ESR signal from radical anions on the PCBM was observed after LiF/Al was deposited onto a P3HT:PCBM layer because of charge transfer at the interface between the PCBM and the LiF/Al, which indicated the formation of PCBM−Li+ complexes. The number of radical anions on the PCBM was enhanced remarkably by the post-annealing process; this enhancement was caused by the surface segregation of PCBM and by the dissociation of LiF at the Al interface by the post-annealing process. The formation of a greater number of anions enhanced the electron scattering, decreased the electron-transport properties of the PCBM molecules, and caused an energy-level shift at the interface. These effects led to degradation in the device performance.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
24
Journal Page Range
p. 243903-243903.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

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