Behaviour of ytterbium in p-type GaInSbAs epitaxial layers

The results of the investigation of p-Ga0.82In0.84As0.16 epitaxial layers doped with ytterbium are presented. The results of Hall effect measurements show that the lowest concentration of holes in non-doped samples reaches 2.5 x 1015cm-3 at 77 K, their mobility constitutes 740 cm2/V x s. Enhancement of hole mobility is observed in ytterbium-containing samples. It is assumed that this phenomenon is caused by the interaction of ytterbium with impurities in a melt solution accompanied by the formation of chemical compounds which do not fall in the solid phase. Ytterbium introduction results in a purification of layers produced by the method of liquid phase epitaxy