Published December 17, 2012
| Version v1
Journal article
Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing
Creators
- 1. Research Fellowships of the Japan Society for the Promotion of Science, Japan Society for the Promotion of Science, 1-8 Chiyoda, Tokyo 102-8472 (Japan)
- 2. Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan)
- 3. Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012 (Japan)
- 4. Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395 (Japan)
Description
We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 μm, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.
Additional details
Identifiers
- DOI
- 10.1063/1.4772513;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 101
- Journal Issue
- 25
- Journal Page Range
- p. 252106-252106.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44048353
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CARRIER LIFETIME; CARRIERS; CRYSTAL DEFECTS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GRAIN SIZE; INACTIVATION; KRYPTON FLUORIDE LASERS; LASER RADIATION; POLYCRYSTALS; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS; UNDERWATER; WATER
- Descriptors DEC
- CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; EXCIMER LASERS; FILMS; GAS LASERS; HEAT TREATMENTS; HYDROGEN COMPOUNDS; LASERS; LEVELS; LIFETIME; MATERIALS; MICROSTRUCTURE; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS; SIZE
Optional Information
- Notes
- (c) 2012 American Institute of Physics