A multiscale coupled finite-element and phase-field framework to modeling stressed grain growth in polycrystalline thin films
- 1. Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstrasse 15, 99423 Weimar (Germany)
- 2. Department of Mechanical Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of)
- 3. Department of Mechanical & Materials Engineering, Universiti Kebangsaan Malaysia (UKM), Bangi 43600 (Malaysia)
- 4. Faculty of Civil Engineering, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)
- 5. Division of Computational Mechanics, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)
Description
A previously-developed finite-deformation- and crystal-elasticity-based constitutive theory for stressed grain growth in cubic polycrystalline bodies has been augmented to include a description of excess surface energy and grain-growth stagnation mechanisms through the use of surface effect state variables in a thermodynamically-consistent manner. The constitutive theory was also implemented into a multiscale coupled finite-element and phase-field computational framework. With the material parameters in the constitutive theory suitably calibrated, our three-dimensional numerical simulations show that the constitutive model is able to accurately predict the experimentally-determined evolution of crystallographic texture and grain size statistics in polycrystalline copper thin films deposited on polyimide substrate and annealed at high-homologous temperatures. In particular, our numerical analyses show that the broad texture transition observed in the annealing experiments of polycrystalline thin films is caused by grain growth stagnation mechanisms. - Graphical abstract: - Highlights: • Developing a theory for stressed grain growth in polycrystalline thin films. • Implementation into a multiscale coupled finite-element and phase-field framework. • Quantitative reproduction of the experimental grain growth data by simulations. • Revealing the cause of texture transition to be due to the stagnation mechanisms.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jcp.2016.09.061Additional details
Identifiers
- DOI
- 10.1016/j.jcp.2016.09.061;
- PII
- S0021-9991(16)30482-X;
Publishing Information
- Journal Title
- Journal of Computational Physics
- Journal Volume
- 327
- Journal Page Range
- p. 779-798
- ISSN
- 0021-9991
- CODEN
- JCTPAH
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48069541
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANNEALING; COMPUTERIZED SIMULATION; CRYSTALLOGRAPHY; DEFORMATION; ELASTICITY; FINITE ELEMENT METHOD; GRAIN GROWTH; GRAIN SIZE; NUMERICAL ANALYSIS; POLYCRYSTALS; STAGNATION; STRESSES; SUBSTRATES; SURFACE ENERGY; SURFACES; TEXTURE; THIN FILMS; THREE-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- CALCULATION METHODS; CRYSTALS; ENERGY; FILMS; FREE ENERGY; HEAT TREATMENTS; MATHEMATICAL SOLUTIONS; MATHEMATICS; MECHANICAL PROPERTIES; MICROSTRUCTURE; NUMERICAL SOLUTION; PHYSICAL PROPERTIES; SIMULATION; SIZE; SURFACE PROPERTIES; THERMODYNAMIC PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.