Published June 1999
| Version v1
Journal article
Recombination and carrier transport mechanisms in Hg1-x CdxTe single crystals and p+ - n photodiodes
- 1. AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Poluprovodnikov
Description
Electrical and photo electrical properties of Hg1-x CdxTe (x=0,205, 0,215, 0,265) single crystals and p+ - n-type photodiodes on their base are investigated in the spectral regions of λ approx 3 / 5 and 8 / 12 μm. It is shown that, in In-doped Hg Cd Te crystals (NIn ≤ 3 centre dot 1015 cm-3), the basic recombination mechanism of nonequilibrium carriers is Auger-recombination as in undoped n-Hg Cd Te single crystals
Additional details
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal
- Journal Volume
- 44
- Journal Issue
- 6
- Journal Page Range
- p. 752-758
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 31007009
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM TELLURIDES; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; INDIUM ADDITIONS; MERCURY TELLURIDES; MONOCRYSTALS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; RECOMBINATION; SEMICONDUCTOR DIODES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; MATERIALS; MERCURY COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE