Published April 1984 | Version v1
Journal article Metadata-only

Supersaturation of antimony in silicon by vitreous carbon strip heater annealing

Creators

  • 1. Australian Atomic Energy Commission Research Establishment, Lucas Heights. Applied Physics Div.

Description

A description is given of a simple vitreous carbon strip heater for transient annealing of ion-implanted semiconductors. Antimony-implanted silicon samples were annealed for 15 to 600 s at temperatures in the range 650-910 deg C. Annealing was confirmed by Rutherford backscattering and electrical measurements. Supersaturated solid solutions of Sb in Si were observed with a maximum solubility of 1.0 x 1021 Sb cm-3 at 650 deg C. Electrical measurements appear to give solubilities lower than those determined by backscattering. (author)

Additional details

Publishing Information

Journal Title
Radiat. Eff.
Journal Volume
81
Journal Issue
1-2
Series
Radiat. Eff.
Journal Page Range
23-30
ISSN
0033-7579

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
15055775
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ANTIMONY IONS; ELECTRIC CONDUCTIVITY; HALL EFFECT; HEATERS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; RUTHERFORD SCATTERING; SEMICONDUCTOR MATERIALS; SILICON; SOLID SOLUTIONS; SOLUBILITY; SUPERSATURATION; TEMPERATURE DEPENDENCE; TRANSIENTS
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; DISPERSIONS; ELASTIC SCATTERING; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; IONS; MATERIALS; MIXTURES; PHYSICAL PROPERTIES; RADIATION EFFECTS; SATURATION; SCATTERING; SEMIMETALS; SOLUTIONS