Published July 15, 2013
| Version v1
Journal article
Comment on "Investigation of the device instability feature caused by electron trapping in pentacene field effect transistors"[Appl. Phys. Lett. 100, 063306 (2012)]
Creators
- 1. Materials R and D Center, Samsung Advanced Institute of Technology, Yongin-si, Gyeonggi-do 446-712 (Korea, Republic of)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1063/1.4816013;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 103
- Journal Issue
- 3
- Journal Page Range
- p. 036101-036101.2
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44078633
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CARRIERS; ELECTRONS; EQUIPMENT; FIELD EFFECT TRANSISTORS; HOLES; INSTABILITY; ORGANIC SEMICONDUCTORS; PENTACENE; RADIATION EFFECTS; TRAPPING; TRAPS
- Descriptors DEC
- AROMATICS; CONDENSED AROMATICS; ELEMENTARY PARTICLES; FERMIONS; HYDROCARBONS; LEPTONS; MATERIALS; ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TRANSISTORS
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC