Published 1976
| Version v1
Journal article
Measurements of the lateral spread of heavy ions implanted into silicon
Description
In this communication the method of Furukawa et al, (Appl. Phys. Lett.; 22:No 3 (1973)) together with high resolution Rutherford backscattering is employed to measure the lateral spread of several heavy ions in silicon over the energy range 10 to 400 keV. Single crystal silicon was implanted with Cu, Kr, Cd, Xe, Dy, W, Pb and Bi. (author)
Additional details
Identifiers
Publishing Information
- Journal Title
- Radiation Effects
- Journal Volume
- 29
- Journal Issue
- 3
- Series
- Radiat. Eff.
- Journal Page Range
- 189-190
- ISSN
- 0033-7579
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 7274099
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; BISMUTH IONS; CADMIUM IONS; COPPER IONS; DYSPROSIUM IONS; ION IMPLANTATION; KEV RANGE; KRYPTON IONS; LEAD IONS; MONOCRYSTALS; SILICON; TUNGSTEN IONS; XENON IONS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTALS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; IONS; SEMIMETALS
Optional Information
- Notes
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