Silicon nanophotonics for on-chip light manipulation
Creators
- 1. Center for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310058 (China)
Description
The field of silicon nanophotonics has attracted considerable attention in the past decade because of its unique advantages, including complementary metal–oxide–semiconductor (CMOS) compatibility and the ability to achieve an ultra-high integration density. In particular, silicon nanophotonic integrated devices for on-chip light manipulation have been developed successfully and have played very import roles in various applications. In this paper, we review the recent progress of silicon nanophotonic devices for on-chip light manipulation, including the static type and the dynamic type. Static on-chip light manipulation focuses on polarization/mode manipulation, as well as light nanofocusing, while dynamic on-chip light manipulation focuses on optical modulation/switching. The challenges and prospects of high-performance silicon nanophotonic integrated devices for on-chip light manipulation are discussed. (topical review)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/27/10/104208Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 27
- Journal Issue
- 10
- Journal Page Range
- [12 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52030292
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CMOS CIRCUITS; COMPATIBILITY; NANOSTRUCTURES; POLARIZATION; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- ELECTRONIC CIRCUITS; ELEMENTS; INTEGRATED CIRCUITS; MATERIALS; MICROELECTRONIC CIRCUITS; SEMIMETALS