Published October 1, 2018 | Version v1
Journal article

Silicon nanophotonics for on-chip light manipulation

  • 1. Center for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310058 (China)

Description

The field of silicon nanophotonics has attracted considerable attention in the past decade because of its unique advantages, including complementary metal–oxide–semiconductor (CMOS) compatibility and the ability to achieve an ultra-high integration density. In particular, silicon nanophotonic integrated devices for on-chip light manipulation have been developed successfully and have played very import roles in various applications. In this paper, we review the recent progress of silicon nanophotonic devices for on-chip light manipulation, including the static type and the dynamic type. Static on-chip light manipulation focuses on polarization/mode manipulation, as well as light nanofocusing, while dynamic on-chip light manipulation focuses on optical modulation/switching. The challenges and prospects of high-performance silicon nanophotonic integrated devices for on-chip light manipulation are discussed. (topical review)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/27/10/104208

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
27
Journal Issue
10
Journal Page Range
[12 p.]
ISSN
1674-1056

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52030292
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
CMOS CIRCUITS; COMPATIBILITY; NANOSTRUCTURES; POLARIZATION; SEMICONDUCTOR MATERIALS; SILICON
Descriptors DEC
ELECTRONIC CIRCUITS; ELEMENTS; INTEGRATED CIRCUITS; MATERIALS; MICROELECTRONIC CIRCUITS; SEMIMETALS