Published 1980
| Version v1
Report
Restricted
Review of the experimental results on impurity centers in elemental semiconductors obtained by μSR and other techniques
Description
Selected electron paramagnetic resonance studies of defect centers in group IV semiconductors are reviewed. Features of this research which are useful in analyzing the nature of normal and anomalous muonium (Mu and Mu*) in these crystals are pointed out, and a moderately specific model of Mu and Mu* is presented and compared to studies of hydrogen in silicon and germanium
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS., PC A02/MF A01.
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Pagination
- 9 p.
- Report number
- LA-UR--80-2377
Conference
- Title
- 2. international topical meeting on muon spin rotation.
- Dates
- Aug 1980.
- Place
- Vancouver, BC, Canada.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11566590
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; GERMANIUM; MUON PROBES; MUONIUM; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTS; MAGNETIC RESONANCE; METALS; PROBES; RESONANCE; SEMIMETALS
Optional Information
- Secondary number(s)
- CONF-800855--3.