Effect of surface state density on room temperature photoluminescence from Si-SiO2 structures in the range of band-to-band recombination in silicon

The relation between the intensity of band-to-band photoluminescence in single-crystal silicon and the surface state density at the interface between silicon and silicon dioxide in Si-SiO2 structures fabricated by the technology used to manufacture charge-coupled devices was studied. The surface state density was measured by subjecting the Si-SiO2 structures to annealing in hydrogen and to gamma irradiation