Published July 2011 | Version v1
Journal article

Crystalline, Optical and Electrical Properties of NiZnO Thin Films Fabricated by MOCVD

  • 1. State Key Laboratory on Integrated Optoelectronics, and College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)
  • 2. School of Physics and Optoelectronics Technology, Dalian University of Technology, Dalian 116023 (China)

Description

NiZnO thin films are grown on c-plane sapphire substrates by using a photo-assisted metal organic chemical vapor deposition (MOCVD) system. The effect of the Ni content on the crystalline, optical and electrical properties of the films are researched in detail. The NiZnO films could retain a basic wurtzite structure when the Ni content is less than 0.18. As Ni content increases, crystal quality degradation could be observed in the x-ray diffraction patterns and a clear red shift of the absorption edge can be observed in the transmittance spectrum. Furthermore, the donor defects in the NiZnO film can be compensated for effectively by increasing the Ni content. The change of Ni content has an important effect on the properties of NiZnO films. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/28/7/077301

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
28
Journal Issue
7
Journal Page Range
[3 p.]
ISSN
0256-307X
CODEN
CPLEEU