High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process

A self-aligned process to fabricate a "metal-quantum dot-metal" structure is presented, based on an "electron beam lithography, thin film deposition and dry etching process". The sacrificial layers used can improve the lift-off process, and novel lithography layouts design can improve the mechanical strength of the fabricated nanostructures. The superiority of the self-aligned process includes low request for overlay accuracy, high compatibility with a variety of materials, and applicable to similar structure devices fabrication. Finally, a phase change memory with fully confined phase-change material node, with the length × width × height of 255 × 45 × 30 nm³ was demonstrated. (paper)