Dielectric waveguide for middle and far infrared radiation

The possibility of using the normal skin effect in dielectric waveguides for long-wavelength radiation is analyzed. A design of a waveguide integrated with a heterolaser is suggested, in which an undoped layer of GaAs is clad between heavily-doped n- and p-AlxGa1-x As alloy layers, reflecting radiation because of the normal skin effect. It is shown that an efficient waveguide can be formed using n-AlxGa1-x As layers with x < 0.45 and the electron concentration N > 5 x 1018 cm-3 and p-AlxGa1-x As layers of any composition with the hole concentration P ≥ 3 x 1019 cm-3.