Published August 2018 | Version v1
Journal article Metadata-only

Exploration of Si-doped SnO2 composition and properties of oxide/Ag/oxide multilayers prepared using continuous composition spread by sputtering

Creators

  • 1. Division of Nano & Information Technology, KIST School, Korea University of Science and Technology, 5, Hwarang-ro 14 gil, Seongbuk-gu, Seoul 02792 (Korea, Republic of)
  • 2. Center for Electronic Materials, Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14 gil, Seongbuk-gu, Seoul 02792 (Korea, Republic of)
  • 3. School of Chemical and Biological Engineering, Seoul National University, Gwanak-gu, Seoul 08826 (Korea, Republic of)

Description

Highlights: •Si-doped SnO2 oxide was developed for oxide-metal-oxide (OMO) multilayer. •Best sputtered oxide composition was found by continuous composition spread method. •OMO multilayer on polymer has a sheet resistance of 9.2 Ω/sq and 81% transmittance. •Bending test shows that the OMO multilayer can be employed for flexible electronics. -- Abstract: Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin films were fabricated on flexible substrates at room temperature for indium free transparent conducting electrode. The optimal composition of Si-doped SnO2 was found by investigating electrical properties of various composition deposited by off-axis RF magnetron sputtering continuous composition spread method. Si-doped SnO2 thin films have low resistivity (0.07 Ω·cm) at doping content of Si (0.14 wt%). Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin films were fabricated using optimized composition deposited by on-axis RF and DC sputtering. The optimized Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin film has resistivity of 9.1 × 10−5 Ω·cm and 81% transmittance in the visible region (550 nm).

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2018.05.010

Additional details

Identifiers

DOI
10.1016/j.tsf.2018.05.010;
PII
S0040609018303250;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
660
Journal Page Range
p. 606-612
ISSN
0040-6090
CODEN
THSFAP

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
50037009
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COMPOSITE MATERIALS; DOPED MATERIALS; ELECTRICAL PROPERTIES; EXPLORATION; LAYERS; MAGNETRONS; POLYMERS; SILICON ADDITIONS; SILVER; SPUTTERING; SUBSTRATES; THIN FILMS; TIN OXIDES
Descriptors DEC
ALLOYS; CHALCOGENIDES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; MATERIALS; METALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON ALLOYS; TIN COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.