Published November 17, 2008
| Version v1
Journal article
Multiple pulse thermal damage thresholds of materials for x-ray free electron laser optics investigated with an ultraviolet laser
Creators
- 1. Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94539 (United States)
- 2. Kovio, Inc., 1145 Sonora Court, Sunnyvale, California 94086 (United States)
Description
Optical elements to be used for x-ray free electron lasers (XFELs) must withstand multiple high-fluence pulses. We have used an ultraviolet laser to study the damage of two candidate materials, crystalline Si and B4C-coated Si, emulating the temperature profile expected to occur in optics exposed to XFEL pulses. We found that the damage threshold for 105 pulses is ∼20% to 70% lower than the melting threshold
Additional details
Identifiers
- DOI
- 10.1063/1.3021081;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 93
- Journal Issue
- 20
- Journal Page Range
- p. 201105-201105.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051136
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BORON CARBIDES; DAMAGE; FREE ELECTRON LASERS; MELTING; OPTICS; PULSES; SEMICONDUCTOR MATERIALS; SILICON; ULTRAVIOLET RADIATION; X RADIATION
- Descriptors DEC
- BORON COMPOUNDS; CARBIDES; CARBON COMPOUNDS; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; LASERS; MATERIALS; PHASE TRANSFORMATIONS; RADIATIONS; SEMIMETALS
Optional Information
- Notes
- (c) 2008 American Institute of Physics