Published August 2002
| Version v1
Journal article
Efficient and stable visible photoluminescence of nanocrystalline silicon films obtained by laser ablation
- 1. Yinstitut fyiziki napyivprovyidnikyiv, Kyiv (Ukraine)
Description
A strong and stable photoluminescence in the range 400-900 nm is observed in Au-passivated nanocrystalline Si films prepared by laser ablation. Passivation by Au reduces the display of Si dangling bonds and increases the luminescence intensity. Au induces the oxidation of Si nanocrystals and changes the inter surface structure from SiOx (0<x<2) to silicon dioxide with a higher potential barrier and better stability
Additional details
Additional titles
- Original title (Ukrainian)
- Efektivna ta stabyil'na vidima fotolyumyinestsentsyiya plyivok nanokristalyichnogo kremnyiyu oderzhanikh lazernoyu ablyatsyijeyu
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kiev)
- Journal Volume
- 47
- Journal Issue
- 8
- Journal Page Range
- p. 760-762
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 34010633
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABLATION; FILMS; GOLD IONS; ION IMPLANTATION; LASER RADIATION; PHOTOLUMINESCENCE; SILICON OXIDES; SURFACE PROPERTIES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; EMISSION; IONS; LUMINESCENCE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; SILICON COMPOUNDS