Energetic structure of the contact interface of metal-wide zone semiconductor A2B6

Height of Schottky barriers on pickled surface of A2B6 compounds (CdTe, CdS, ZnSe and ZnS) with electron conduction was investigated in wide range of work functions of metals (Al, Ag, Cu, Ni, Au, Pt). It is shown that barrier height is determined by the contact difference of potentials and by the density of surface electron states. The east one is maximal (∼1013 cm-2, eV-1) for metal-CdTe contacts, decreases with growth of the degree of semiconductor ionic character and doesn't practically affect the heights of barriers of metal-ZnS contacts. 9 refs