Published January 2007 | Version v1
Journal article Metadata-only

Pressure related defect engineering in silicon-on-insulator-like structures produced by either oxygen or nitrogen ion implantation

Creators

  • 1. Institute of Semiconductor Physics, 630090 Novosibirsk, Lavrentieva 13 (Russian Federation)

Description

Pressure-related effects in silicon-on-insulator-like structures fabricated in either nitrogen or oxygen implanted silicon during subsequent annealing are analyzed. Among them are the removal of radiation defects from the top silicon layer, some degradation of the buried insulator, pressure dependence of charges at the Si/SiO2 (or Si/SiNx) interface, formation of the electrically active centers in the top silicon layer and the substrate. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssb.200672536

Additional details

Identifiers

DOI
10.1002/pssb.200672536;

Publishing Information

Journal Title
Physica Status Solidi. B, Basic Research
Journal Volume
244
Journal Issue
1
Journal Page Range
p. 443-447
ISSN
0370-1972
CODEN
PSSBBD

Conference

Title
12. international conference on high pressure semiconductor physics
Acronym
HPSP-12
Dates
31 Jul - 3 Aug 2006
Place
Barcelona (Spain)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
38014149
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CRYSTAL DEFECTS; DOPED MATERIALS; INTERFACES; ION IMPLANTATION; KEV RANGE 100-1000; NITROGEN ADDITIONS; OXYGEN ADDITIONS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PRESSURE DEPENDENCE; PRESSURE RANGE GIGA PA; SILICON; SILICON NITRIDES; SILICON OXIDES; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; THICKNESS
Descriptors DEC
ALLOYS; CHALCOGENIDES; CRYSTAL STRUCTURE; DIMENSIONS; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; KEV RANGE; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; PRESSURE RANGE; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; TEMPERATURE RANGE

Optional Information

Notes
With 5 figs., 11 refs.. SICI: 0370-1972(200701)244:1<443::AID-PSSB200672536>3.0.TX;2-3