Optical and electronic properties of pure and fully hydrogenated SiC and GeC nanosheets: first-principles study
Creators
- 1. Islamic Azad University, Department of Physics, College of Technical and Engineering, Saveh Branch (Iran, Islamic Republic of)
- 2. Islamic Azad University, Young Researchers and Elite Club, West Tehran Branch (Iran, Islamic Republic of)
- 3. Pachhunga University College, Department of Physics (India)
- 4. University of Namur, LISE Laboratory, Research Centre in Physics of Matter and Radiation (PMR) (Belgium)
- 5. Islamic Azad University, Department of Electrical Engineering, College of Technical and Engineering, Saveh Branch (Iran, Islamic Republic of)
- 6. Payame Noor University (PNU), Department of Physics (Iran, Islamic Republic of)
Description
In this work, the electronic and linear optical properties of pure and fully hydrogenated SiC and GeC nanosheets have been studied using the full potential linearized augmented plane wave method within the density functional theory. Our study on SiC and GeC has confirmed their potential applications in electronic devices. The dielectric tensor is derived within the random phase approximation. The dielectric function, reflectivity, energy loss function and refraction index of these nanosheets for parallel (E||X) and perpendicular (E||Z) electric field polarization directions are well described. It is observed that hydrogenated nanosheets have semiconductor behavior with anisotropic optical spectra for both E||X and E||Z polarization direction. Also, hydrogenated nanosheets provide new electronic transitions between their neighboring atoms.
Additional details
Identifiers
Publishing Information
- Journal Title
- Optical and Quantum Electronics
- Journal Volume
- 50
- Journal Issue
- 7
- Journal Page Range
- p. 1-13
- ISSN
- 0306-8919
- CODEN
- OQELDI
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51021422
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANISOTROPY; DENSITY FUNCTIONAL METHOD; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRONIC EQUIPMENT; ENERGY LOSSES; HYDROGENATION; NANOSTRUCTURES; POLARIZATION; RANDOM PHASE APPROXIMATION; REFLECTIVITY; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SPECTRA; WAVE PROPAGATION
- Descriptors DEC
- APPROXIMATIONS; CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; CHEMICAL REACTIONS; EQUIPMENT; LOSSES; MATERIALS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SURFACE PROPERTIES; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2018 Springer Science+Business Media, LLC, part of Springer Nature
- Notes
- http://www.springer-ny.com