Photoeffects arising from filled electron-traps in β-rhombohedral boron

A model of the trapping processes in β-rhombohedral boron has been elaborated on the basis of photoconductivity and photo-ESR investigations. The model assumes two types of traps for electrons (type A and type B), which are responsible for two processes observed in the rise and decay of photoconductivity and photo-ESR. Each process is approximately described by a logarithmic function of time. This dependence is ascribed to a special distribution of energies needed fo trap-emptying. Some effects arising from significant occupation of traps are presented in this paper. (Auth.)