Published February 1974 | Version v1
Journal article Metadata-only

Galvanomagnetic properties of compensated n-InAs

Creators

  • 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Гальваномагнитные свойства компенсированного н-InAs

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
8
Journal Issue
2
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
335-342

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
5128364
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ACTIVATION ENERGY; ARSENIDES; CARRIER MOBILITY; DOPED MATERIALS; FERMI LEVEL; HALL EFFECT; INDIUM COMPOUNDS; LOW TEMPERATURE; MAGNETORESISTANCE; MEDIUM TEMPERATURE; N-TYPE CONDUCTORS; TEMPERATURE DEPENDENCE; ULTRALOW TEMPERATURE; VERY LOW TEMPERATURE
Descriptors DEC
ARSENIC COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY; ENERGY LEVELS; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS

Optional Information

Notes
For English translation see the journal Sov. Phys.-Semicond.