Recent advances in the spin Hall effect of light
Creators
- 1. Hunan Provincial Key Laboratory of Intelligent Information Processing and Application, College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421002 (China)
- 2. Synergetic Innovation Center for Quantum Effects and Applications, College of Physics and Information Science, Hunan Normal University, Changsha 410081 (China)
- 3. Agency for Science, Technology and Research, Institute of Materials Research and Engineering, 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634 (Singapore)
- 4. Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082 (China)
- 5. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)
Description
The spin Hall effect (SHE) of light, as an analogue of the SHE in electronic systems, is a promising candidate for investigating the SHE in semiconductor spintronics/valleytronics, high-energy physics and condensed matter physics, owing to their similar topological nature in the spin–orbit interaction. The SHE of light exhibits unique potential for exploring the physical properties of nanostructures, such as determining the optical thickness, and the material properties of metallic and magnetic thin films and even atomically thin two-dimensional materials. More importantly, it opens a possible pathway for controlling the spin states of photons and developing next-generation photonic spin Hall devices as a fundamental constituent of the emerging spinoptics. In this review, based on the viewpoint of the geometric phase gradient, we give a detailed presentation of the recent advances in the SHE of light and its applications in precision metrology and future spin-based photonics. (review)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6633/aa5397Additional details
Identifiers
Publishing Information
- Journal Title
- Reports on Progress in Physics
- Journal Volume
- 80
- Journal Issue
- 6
- Journal Page Range
- [17 p.]
- ISSN
- 0034-4885
- CODEN
- RPPHAG
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49080091
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- HALL EFFECT; HIGH ENERGY PHYSICS; L-S COUPLING; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SPIN; THIN FILMS; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- ANGULAR MOMENTUM; COUPLING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; FILMS; INTERMEDIATE COUPLING; MATERIALS; PARTICLE PROPERTIES; PHYSICS