Published November 1988
| Version v1
Journal article
Range profiles of medium and heavy ions implanted into SiO2
- 1. Universidade Federal do Rio Grande do Sul, Porto Alegre (Brazil). Inst. de Fisica
- 2. Universidade Federal do Rio Grande do Sul, Porto Alegre (Brazil). Dept. de Engenharia Eletrica
Description
As, Cs, Xe, Eu and Yb have been implanted into SiO2 in a typically 10-200 keV energy range. The implanted profiles were analysed using the Rutherford backscattering technique. The obtained projected ranges (Rp) and projected range stragglings (ΔRp) are compared with recent predictions due to Ziegler, Biersack and Littmark. While good agreement is obtained between the theoretical and experimental values of Rp, significant deviations are found for ΔRp. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research, Section B
- Journal Volume
- 35
- Journal Issue
- 1
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 17-20
- ISSN
- 0168-583X
- CODEN
- NIMBE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 20027628
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ARSENIC IONS; BACKSCATTERING; CESIUM IONS; EUROPIUM IONS; IMPLANTS; ION IMPLANTATION; KEV RANGE 10-100; KEV RANGE 100-1000; RUTHERFORD SCATTERING; SILICON OXIDES; STOPPING POWER; XENON IONS; YTTERBIUM IONS
- Descriptors DEC
- ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; ELASTIC SCATTERING; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SILICON COMPOUNDS