Published February 1990 | Version v1
Journal article Metadata-only

Some features of distribution of beryllium implanted into gallium phosphide

Creators

  • 1. Moskovskij Inst. Stali i Splavov, Moscow (USSR)

Description

SIMS, Rutherford backscattering and Hall effect measurements have been employed to study ion implantation of beryllium into gallium phosphide. The causative factors leading to difference in theoretically calculated and experimentally measured distributions are analyzed. The influence of temperature anneal on the distribution profiles of the implanted beryllium is studied

Additional details

Additional titles

Original title (Russian)
Некоторые особенности распределения имплантированного в фосфид галлия бериллия

Publishing Information

Journal Title
Poverkhnost': Fizika, Khimiya, Mekhanika
Journal Issue
no.2
Series
Poverkhn.: Fiz., Khim., Mekh.
CODEN
PFKMD

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
22042751
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; BERYLLIUM COMPOUNDS; CATIONS; DOPED MATERIALS; GALLIUM PHOSPHIDES; HALL EFFECT; ION IMPLANTATION; KEV RANGE 10-100; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SPATIAL DISTRIBUTION
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; CHARGED PARTICLES; DISTRIBUTION; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; KEV RANGE; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATION EFFECTS