Published 2001
| Version v1
Journal article
Ion Implantation in III-V semiconductor technology (Part 2)
Creators
- 1. Instytut Techniki Mikrosystemow, Politechnika Wroclawska, Wroclaw (Poland)
Description
no abstract available
Additional details
Additional titles
- Original title (Polish)
- Implantacja jonow w technologii polprzewodnikow III-V (Cz.2)
Publishing Information
- Journal Title
- Elektronika
- Journal Volume
- 42
- Journal Issue
- 12
- Journal Page Range
- p. 6-8
- ISSN
- 0033-2089
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 33070042
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ACTIVATION ENERGY; ALUMINIUM COMPOUNDS; ANNEALING; ELECTRIC CONDUCTIVITY; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INDIUM COMPOUNDS; INDIUM NITRIDES; ION IMPLANTATION; NITRIDES; RADIATION DOSES; SURFACE COATING
- Descriptors DEC
- DEPOSITION; DOSES; ELECTRICAL PROPERTIES; ENERGY; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES
Optional Information
- Notes
- 2 tabs