Effect of the ion current density and target temperature on radiation induced defect formation under ion bombardment of semiconductor crystals

On the basis of the secondary defect formation model, the dependences of the post-implantation damage M on the ion current density j and irradiation temperature T are studied. The model includes the supposition that the primary defect regions resulted from an ion manage to overlap during their stabilization time. The vacancy damage is obtained to grow nonlinearily with j increase, M becoming weaker at large j. With T increase M decreases. The dose of continuous amorphization PHI is calculated at which the amorphous layer appears on the semiconductor surface. PHI increases with temperature growth and significantly decreases with j increase. The results obtained are in accordance with a set of experiments