Published November 3, 2008 | Version v1
Journal article

Pure Material Vapor Source by Induction Heating Evaporator for an Electron Cyclotron Resonance Ion Source

  • 1. Devision of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka Univ. 2-1 Yamada-oka, Suita-shi, Osaka 565-0871 (Japan)
  • 2. National Institute of Radiological Sciences, 4-9-1 Anagaw a, Inage-ku, Chiba-shi, Chiba, 263-8555 (Japan)
  • 3. Tateyama Machine Co., Ltd., 30 Shimonoban, Toyama, 930-1305 (Japan)
  • 4. Department of Mechanical Engineering, Toyo Univ., 2100 Kuzirai, Kawagoe-shi, Saitama, 350-0185 (Japan)

Description

Multiply charged iron ions are produced from solid pure material in an electron cyclotron resonance (ECR) ion source. We develop an evaporator by using induction heating with the induction coil which is made from bare molybdenum wire and surrounding the pure iron rod. We optimize the shape of induction heating coil and operation of rf power supply. We conduct experiment to investigate reproducibility and stability in the operation and heating efficiency. Induction heating evaporator produces pure material vapor, because materials directly heated by eddy currents have non-contact with insulated materials which are impurity gas sources. The power and the frequency of the induction currents range from 100 to 900 W and from 48 to 23 kHz, respectively. The working pressure is about 10-4 to 10-3 Pa. We measure temperature of iron rod and film deposition rate by depositing iron vapor to crystal oscillator. We confirm stability and reproducibility of evaporator enough to conduct experiment in ECR ion source. We can obtain required temperature of iron under maximum power of power supply. We are aiming the evaporator higher melting point material than iron.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1066
Journal Issue
1
Journal Page Range
p. 529-532
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
17. international conference on ion implantation technology
Dates
8-13 Jun 2008
Place
Monterey, CA (United States)

Optional Information

Notes
(c) 2008 American Institute of Physics