Published June 1989 | Version v1
Journal article Metadata-only

Photovoltaic properties of the In2O3-InSe-Pt system

Creators

  • 1. Azerbajdzhanskij Gosudarstvennyj Univ., Baku (USSR)

Description

Some electric and photoelectric properties of the In2O3-n-In-Se-Pt system are studied. The method of study is described and the results are presented. The voltfarad dependence of the In2O3-n-In-Se-Pt contact at 300 K, spectral distribution of its photosensitivity in the case of illumination from In2O3 is presented

Additional details

Additional titles

Original title (Russian)
Фотовольтаические свойства системы Ин

Publishing Information

Journal Title
Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
Journal Volume
32
Journal Issue
6
Series
Izv. Vyssh. Uchebn. Zaved., Fiz.
Journal Page Range
120-122
ISSN
0021-3411
CODEN
IVUFA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
21077105
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
FABRICATION; INDIUM OXIDES; INDIUM SELENIDES; MONOCRYSTALS; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; PHOTOVOLTAIC EFFECT; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS
Descriptors DEC
CHALCOGENIDES; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; INDIUM COMPOUNDS; METALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; PLATINUM METALS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SENSITIVITY; TRANSITION ELEMENTS