Published November 3, 2008
| Version v1
Journal article
(110) Ultrathin GOI layers fabricated by Ge condensation method
Creators
- 1. University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 (Japan)
- 2. Tokyo Institute of Technology (Japan)
Description
In this paper, successful fabrication of (110)-oriented ultrathin compressively strained GOI substrates by using Ge condensation method is demonstrated, for the first time. An initial structure of Si/Si0.7Ge0.3 (40 nm)/(110) SOI structure was fabricated by MBE at 100 deg. C and high temperature oxidation was carried out to form (110) surface pure GOI structures. It was confirmed from the thickness of the fabricated GOI structures (12 nm) that the total amount of Ge atoms preserves during the condensation. The surface orientation was confirmed to be the (110)-oriented by the XRD method
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2008.08.102Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2008.08.102;
- PII
- S0040-6090(08)00903-6;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 517
- Journal Issue
- 1
- Journal Page Range
- p. 178-180
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 5. International conference on silicon epitaxy and heterostructures
- Acronym
- ICSI-5
- Dates
- 20-24 May 2007
- Place
- Marseille (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40058989
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- FABRICATION; LAYERS; MOLECULAR BEAM EPITAXY; OXIDATION; STRAINS; SURFACES; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION
- Descriptors DEC
- CHEMICAL REACTIONS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; SCATTERING; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.