Green and yellow light emitting diodes produced from vapour phase epitaxial GaP:N. 2

Electroluminescence, DLTS, and optical DLTS studies are made on 1 MeV proton irradiated VPE-GaP:N and VPE-GaAs/sub 0.1/P/sub 0.9/:N LED's. The irradiation produces a decrease of the net doping level which is correlated with the decrease of a deep donor-like centre (430 meV). The decrease of both concentrations is probably caused by V/sub Ga/ or interstitials reacting with the donor-atom. Furthermore, two deep levels with activation energies of 700 and 960 meV are detected. The first one is correlated with an IR-band (1.1 to 1.3 μm). All results indicate that these deep levels correspond to the antisite defect P/sub Ga/ which is of increasing interest. Two other levels (250 and 330 meV) observed after proton irradiation are probably connected with vacancy-like defects. (author)