Published April 23, 2007 | Version v1
Journal article Metadata-only

Topotaxial growth of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films

Creators

  • 1. Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83 Linkoeping (Sweden)
  • 2. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden (Germany)
  • 3. GKSS Research Center Geesthacht, Max-Planck-Str. 1, D-21502 Geesthacht (Germany)

Description

The formation of Ti2AlN by solid state reaction between layers of wurtzite-AlN and α-Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al2O3(0001) at 200 deg. C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400 deg. C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti3AlN. Further annealing at 500 deg. C resulted in a phase transformation into Ti2AlN(0001) after only 5 min

Additional details

Identifiers

DOI
10.1063/1.2731520;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
90
Journal Issue
17
Journal Page Range
p. 174106-174106.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39001205
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM NITRIDES; ALUMINIUM OXIDES; ANNEALING; CRYSTAL GROWTH; DECOMPOSITION; DEPOSITION; EPITAXY; INTERFACES; PHASE TRANSFORMATIONS; REFLECTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TITANIUM COMPOUNDS; TITANIUM-ALPHA; X-RAY DIFFRACTION
Descriptors DEC
ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELEMENTS; FILMS; HEAT TREATMENTS; METALS; NITRIDES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SPECTROSCOPY; SURFACE PROPERTIES; TEMPERATURE RANGE; TITANIUM; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
(c) 2007 American Institute of Physics