Research on high-voltage pulsed power supplies for accelerator applications with advanced SiC devices
Creators
- 1. Pulsed Power Japan Laboratory Ltd., Kusatsu, Shiga (Japan)
- 2. High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki (Japan)
- 3. University of Tsukuba, Tsukuba, Ibaraki (Japan)
- 4. Nagaoka University of Technology, Nagaoka, Niigata (Japan)
- 5. National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki (Japan)
- 6. Japan Atomic Energy Agency, J-PARC Center, Tokai, Ibaraki (Japan)
Description
A number of high-voltage pulsed power supplies used in the accelerator system used discharge tubes such as thyratrons, because of high-voltage more than several tens kV, large currents more than several kA, fast rise time less than several tens ns. However, these discharge tubes had many shortcomings such as short lifetime, low repetition frequency, necessity of auxiliary power supply, poor stability. The performance of the accelerator had remarkably deteriorated by the discharge tube. In recent years, due to the rapid development of SiC semiconductor devices, the voltage and current of the device have been increasing year by year. In addition, as a result of various developments such as the MARX circuit, the LTD circuit, the matrix circuit and the SOS circuit, the circuit configuration operating a large number of semiconductor devices in series and parallel has been advanced. All high voltage pulse power supplies have become possible to realize by using semiconductors only. Then the performance of the accelerator has also been significantly improved. We have conducted a systematic research on the selection of the optimum pulse power system according to the application. A part of this research was conducted as a joint project 'Tsukuba Power Electronics Constellation (TPEC)' project. (author)
Additional details
Identifiers
Publishing Information
- Imprint Title
- Proceedings of the 14th annual meeting of Particle Accelerator Society of Japan
- Imprint Pagination
- [1427 p.]
- Journal Page Range
- p. 50-54
Conference
- Title
- 14. annual meeting of Particle Accelerator Society of Japan
- Acronym
- PASJ2017
- Dates
- 1-3 Aug 2017
- Place
- Sapporo, Hokkaido (Japan)
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 49041061
- Subject category
- S43: PARTICLE ACCELERATORS;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- BEAM EXTRACTION; BEAM PULSERS; ELECTRIC DISCHARGES; ELECTRON DRIFT; ION BEAMS; MAGNETRONS; MOSFET; POWER SUPPLIES; PULSE GENERATORS; RF SYSTEMS; SEMICONDUCTOR SWITCHES; SILICON CARBIDES; THERMAL CONDUCTIVITY; THYRATRONS
- Descriptors DEC
- BEAMS; CARBIDES; CARBON COMPOUNDS; ELECTRICAL EQUIPMENT; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FIELD EFFECT TRANSISTORS; FUNCTION GENERATORS; GAS DISCHARGE TUBES; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MOS TRANSISTORS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SWITCHES; THERMODYNAMIC PROPERTIES; TRANSISTORS
Optional Information
- Notes
- 10 refs., 8 figs., 4 tabs.