Published January 2005
| Version v1
Journal article
Study of the influence of a high temperature treatment on the dispersion of X-rays by defects generated in crystals Cz-Si
Description
By triple-crystal diffractometry, we study the dispersion of X-rays by Czochralski-grown silicon crystals with local defects appeared in them during the annealing at temperatures of 850-1000 degree C and the repeated annealing at 1050 degree C. The characteristics of admixture-structural complexes are calculated. A method of calculation of the radii and densities of clusters and dislocation loops and a method of diagnostics of the defects' type are proposed
Additional details
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kiev)
- Journal Volume
- 50
- Journal Issue
- no.1
- Journal Page Range
- p. 91-95
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 36092333
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; DISPERSIONS; SCATTERING; SILICON; SOLID CLUSTERS; TEMPERATURE RANGE 1000-4000 K; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; HEAT TREATMENTS; SCATTERING; SEMIMETALS; TEMPERATURE RANGE