Published May 2018 | Version v1
Journal article Metadata-only

A Functional Material Based Heterojunction Diode

Creators

  • 1. Al al-Bayt University, Department of Physics (Jordan)
  • 2. Kwame Nkrumah University of Science and Technology, Department of Materials Engineering, College of Engineering (Ghana)
  • 3. King Abdulaziz University, Department of Physics, Faculty of Science (Saudi Arabia)
  • 4. Pittsburg State University, Department of Chemistry (United States)
  • 5. King Saud University, Department of Astronomy and Physics, College of Science (Saudi Arabia)
  • 6. Suez Canal University, Department of Physics, Faculty of Science (Egypt)

Description

In this study, the phosphotungstic acid /p-Si diode was fabricated by a drop coating method. The fabricated diode had excellent rectifying properties. The electrical properties of the diode were investigated in the temperature range of 50-400 K. The optical band gap of the phosphotungstic acid film was determined and found to be 3.66 eV. The electrical and photoresponse properties of an Al/p-Si-phosphotungstic acid/Al photodiode were studied. The electronic parameters such as ideality factor (n), barrier height (ΦB) and series resistance (Rs) were found to be strongly temperature dependent.

Additional details

Identifiers

DOI
10.1007/s12633-016-9525-6;

Publishing Information

Journal Title
Silicon (Print)
Journal Volume
10
Journal Issue
3
Journal Page Range
p. 737-746
ISSN
1876-990X

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
50022078
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COATINGS; ELECTRICAL PROPERTIES; HETEROJUNCTIONS; PHOTODIODES; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THIN FILMS; TUNGSTOPHOSPHORIC ACID
Descriptors DEC
ELEMENTS; FILMS; HYDROGEN COMPOUNDS; INORGANIC ACIDS; INORGANIC COMPOUNDS; OXYGEN COMPOUNDS; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS

Optional Information

Copyright
Copyright (c) 2017 Springer Science+Business Media Dordrecht