Published March 5, 2014
| Version v1
Journal article
Nanoscale characterisation of semiconductors by cathodoluminescence
Creators
- 1. Universität Ulm, Institut für Quantenmaterie / Gruppe Halbleiterphysik, DE-89081 Ulm (Germany)
- 2. Otto-von-Guericke-Universität, Institut für Experimentelle Physik, Magdeburg (Germany)
Description
Cathodoluminescence measurements carried out either in a scanning secondary or a transmission electron microscope allow a direct correlation of structural features with the emission spectra. Applied to semiconductors, numerous material and electronic properties can be determined on a length scale down to 10 nm in favourable cases. In this tutorial, we discuss the nature of the most important light emission processes in semiconductors, and what kind of information can principally be derived. Several examples for the application of this method in studies on bulk and nanocrystalline semiconductor materials are discussed
Availability note (English)
Available from http://dx.doi.org/10.1088/1757-899X/55/1/012018Additional details
Identifiers
Publishing Information
- Journal Title
- IOP Conference Series. Materials Science and Engineering (Online)
- Journal Volume
- 55
- Journal Issue
- 1
- Journal Page Range
- [20 p.]
- ISSN
- 1757-899X
Conference
- Title
- 13. European workshop on modern developments and applications in microbeam analysis
- Acronym
- EMAS 2013 workshop
- Dates
- 12-16 May 2013
- Place
- Porto (Portugal)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47067480
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CATHODOLUMINESCENCE; CRYSTALS; EMISSION SPECTRA; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ELECTRON MICROSCOPY; EMISSION; LUMINESCENCE; MATERIALS; MICROSCOPY; PHOTON EMISSION; SPECTRA