Published March 5, 2014 | Version v1
Journal article

Nanoscale characterisation of semiconductors by cathodoluminescence

  • 1. Universität Ulm, Institut für Quantenmaterie / Gruppe Halbleiterphysik, DE-89081 Ulm (Germany)
  • 2. Otto-von-Guericke-Universität, Institut für Experimentelle Physik, Magdeburg (Germany)

Description

Cathodoluminescence measurements carried out either in a scanning secondary or a transmission electron microscope allow a direct correlation of structural features with the emission spectra. Applied to semiconductors, numerous material and electronic properties can be determined on a length scale down to 10 nm in favourable cases. In this tutorial, we discuss the nature of the most important light emission processes in semiconductors, and what kind of information can principally be derived. Several examples for the application of this method in studies on bulk and nanocrystalline semiconductor materials are discussed

Availability note (English)

Available from http://dx.doi.org/10.1088/1757-899X/55/1/012018

Additional details

Publishing Information

Journal Title
IOP Conference Series. Materials Science and Engineering (Online)
Journal Volume
55
Journal Issue
1
Journal Page Range
[20 p.]
ISSN
1757-899X

Conference

Title
13. European workshop on modern developments and applications in microbeam analysis
Acronym
EMAS 2013 workshop
Dates
12-16 May 2013
Place
Porto (Portugal)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47067480
Subject category
S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CATHODOLUMINESCENCE; CRYSTALS; EMISSION SPECTRA; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ELECTRON MICROSCOPY; EMISSION; LUMINESCENCE; MATERIALS; MICROSCOPY; PHOTON EMISSION; SPECTRA