Hafnium oxide-based ferroelectric devices for computing-in-memory applications

Herein, a layer of 10 nm ferroelectric Al-doped HfO${}_2$ (HAO) film is fabricated and optimized and is further integrated in a nonvolatile memory device with TiN/HAO/Pt/Ti capacitor structure. Long retention, high endurance, and stable storage characteristics, as well as a competitive residual polarization of 2Pr = 24-30 μC cm${}^{-2}$ are achieved. Furthermore, computing-in-memory applications are implemented utilizing the HAO-based ferroelectric memory devices. Typical NOR and NOT logic gates are obtained based on the memristor-aided logic (MAGIC) operations by exploiting the polarization inversion characteristics of the device, which show great potential in realizing other basic Boolean logic operations. The results show that the HAO-based ferroelectric memory device is a strong candidate in the pursuit of next-generation parallel storage and computing systems. (© 2021 Wiley‐VCH GmbH)