Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along (100) in GaAs quantum well lasers, causing rapid degradation. In contrast, the (100) dark-line defect is suppressed in the structures with a strained InGaAs quantum well, so that rapid degradation does not occur