Published December 1, 2019 | Version v1
Journal article

The failure mechanism of NiPtSi multilayer films

  • 1. State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, 988 Keji Road, Kunming, Yunnan, 650106 (China)

Description

In this work, NiPtSi multilayer films were deposited on Si wafer by magnetron sputtering method. The forward voltage (VF) and reverse leakage current (IR) of NiPtSi multilayer films were tested. It was found that VF and IR in some area of the wafer were abnormal as compared with others. Both kinds of multilayer films were examined by transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDAX). And the reason for abnormal electrical properties were discussed based on the microstructure observation. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1347/1/012033

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1347
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
1742-6596

Conference

Title
15. International Russian-Chinese Symposium on New Materials and Technologies
Dates
16-19 Oct 2019
Place
Sochi (Russian Federation)