Published February 1, 2010 | Version v1
Journal article Metadata-only

Characterization of ytterbium silicide formed in ultra high vacuum

Creators

  • 1. Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
  • 2. Max-Planck-Institut fuer Metallforschung, Heisenbergstr. 3, D-70569 Stuttgart (Germany)
  • 3. IEMN/ISEN, UMRS CNRS 8520, Avenue Poincare, Cite Scientifique, BP 69, 59652 Villeneuve d'Ascq Cedex (France)
  • 4. Universite catholique de Louvain, Place du Levant 3, B-1348 Louvain-la-Neuve (Belgium)

Description

The formation of ytterbium silicide fabricated by annealing at 480 0C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi2-x phase, however, the structure is different from the hexagonal AlB2 type.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/209/1/012056

Additional details

Identifiers

DOI
10.1088/1742-6596/209/1/012056;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
209
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
16. international conference on microscopy of semiconducting materials
Dates
17-20 Mar 2009
Place
Oxford (United Kingdom)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42041349
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM BORIDES; AMORPHOUS STATE; ANNEALING; CRYSTALS; HEXAGONAL LATTICES; LAYERS; PHASE STABILITY; PHASE STUDIES; RESOLUTION; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY; YTTERBIUM SILICIDES
Descriptors DEC
ALUMINIUM COMPOUNDS; BORIDES; BORON COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ELEMENTS; HEAT TREATMENTS; MICROSCOPY; RARE EARTH COMPOUNDS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SPECTROSCOPY; STABILITY; YTTERBIUM COMPOUNDS