Published January 1988
| Version v1
Journal article
Lazer radiation effect on luminescent properties of GaP:S monocrystals
Description
The laser radiation effect on luminescent properties of GaP:S monocrystals is investigated. The laser radiation effect both visible- and UV-ranges on the GaP monocrystal surfaces is shown to lead to photoluminescence quenching due to the generation of radiationless recombination centers. Besides the initial line quenching a new band with the maximum at 2, 0.4 eV occurs under the action of laser pulses with energies exceeding the certain threshold value
Additional details
Additional titles
- Original title (Russian)
- Влияние лазерного облучения на люминесцентные свойства монокристаллов GaP:С
Publishing Information
- Journal Title
- Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
- Journal Volume
- 31
- Journal Issue
- 1
- Series
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Page Range
- 66-70
- ISSN
- 0021-3411
- CODEN
- IVUFA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 20004479
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTAL DEFECTS; ENERGY DEPENDENCE; EV RANGE 01-10; GALLIUM PHOSPHIDES; HIGH TEMPERATURE; MEDIUM TEMPERATURE; MONOCRYSTALS; N-TYPE CONDUCTORS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; SULFUR ADDITIONS; TEMPERATURE DEPENDENCE; ULTRAVIOLET RADIATION; VISIBLE RADIATION
- Descriptors DEC
- CRYSTAL STRUCTURE; CRYSTALS; ELECTROMAGNETIC RADIATION; EMISSION; ENERGY RANGE; EV RANGE; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS