Published June 2013
| Version v1
Journal article
Diffusion of silver over atomically clean silicon surfaces
Creators
- 1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Description
The diffusion of silver the (111), (100), and (110) silicon surfaces is studied by Auger electron spectroscopy and low-energy electron diffraction. The mechanisms of diffusion over the (111) and (110) surfaces are revealed, and the temperature dependences of diffusion coefficients are measured. An anisotropy of silver diffusion over the (110) surface is detected
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Experimental and Theoretical Physics
- Journal Volume
- 116
- Journal Issue
- 6
- Journal Page Range
- p. 952-956
- ISSN
- 1063-7761
- CODEN
- JTPHES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44078661
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANISOTROPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; DIFFUSION; ELECTRON DIFFRACTION; SILICON; SILVER; SURFACES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELECTRON SPECTROSCOPY; ELEMENTS; METALS; SCATTERING; SEMIMETALS; SPECTROSCOPY; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2013 Pleiades Publishing, Ltd.
- Notes
- http://www.springer-ny.com