Published March 15, 2004
| Version v1
Journal article
Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing
Description
Ion beam stimulated solid phase crystallization of a-Si1-xGex (0≤x≤1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150 deg. C for a-Si1-xGex with all Ge fractions (0-100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼500 deg. C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2003.08.051;
- PII
- S0169433203010948;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 224
- Journal Issue
- 1-4
- Journal Page Range
- p. 231-234
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 1. international SiGe technology and device meeting - From materials and process technology to device and circuit technology
- Acronym
- ISTDM 2003
- Dates
- 15-17 Jan 2003
- Place
- Nagoya (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38091738
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRITICAL TEMPERATURE; CRYSTAL GROWTH; CRYSTALLIZATION; GERMANIUM SILICIDES; GLASS; ION BEAMS; IRRADIATION; SILICON OXIDES; STIMULATION; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- BEAMS; CHALCOGENIDES; GERMANIUM COMPOUNDS; HEAT TREATMENTS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SILICIDES; SILICON COMPOUNDS; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.