Published December 2018 | Version v1
Journal article

Non-conventional scans in high-resolution X-ray diffraction analysis of epitaxial systems

  • 1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 01 Bratislava, Slovak Republic (United States)

Description

Highlights: • Linear scans in reciprocal space are examined for coplanar diffraction geometry. • Concept of linear scans is extended to non-coplanar set-up. • Scans and resolution in asymmetric non-coplanar geometry are analyzed and discussed. High resolution X-ray diffraction is commonly used for the analysis of single crystalline epitaxial layers exhibiting high degree of crystal perfection. The method enables to resolve fine variations of the measured intensities and therefore is very efficient in the investigation of the structural parameters of single or multilayered epitaxial systems. In this article the method combining the standard HR technique with grazing incidence set-up is outlined. It is shown that in non-coplanar geometry the intensity distribution within the section of reciprocal space perpendicular to the sample surface, standardly scanned in coplanar geometry, can be measured at constant angle of incidence α. For asymmetric diffractions that are not accessible in coplanar geometry the value of α can be decreased to extremely low values close to zero making the method depth-sensitive. The effect of non-coplanar geometry on the angular resolution is analyzed and the possible application of φ scans in asymmetric non-coplanar geometry is discussed. The proposed scans are illustrated by measurements on selected GaN based epitaxial layers and they can be applied also to other types of epitaxial systems with medium crystal quality.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2018.07.009

Additional details

Identifiers

DOI
10.1016/j.apsusc.2018.07.009;
PII
S016943321831883X;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
461
Journal Page Range
p. 23-32
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
5. Progress in Applied Surface, Interface and Thin Film Science and Solar Renewable Energy News
Acronym
SURFINT-SREN V
Dates
20-23 Nov 2017
Place
Florence (Italy)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54056058
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ASYMMETRY; EPITAXY; GALLIUM NITRIDES; LAYERS; MONOCRYSTALS; SURFACES; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SCATTERING

Optional Information

Copyright
Copyright (c) 2018 Elsevier B.V. All rights reserved.