Non-conventional scans in high-resolution X-ray diffraction analysis of epitaxial systems
- 1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 01 Bratislava, Slovak Republic (United States)
Description
Highlights: • Linear scans in reciprocal space are examined for coplanar diffraction geometry. • Concept of linear scans is extended to non-coplanar set-up. • Scans and resolution in asymmetric non-coplanar geometry are analyzed and discussed. High resolution X-ray diffraction is commonly used for the analysis of single crystalline epitaxial layers exhibiting high degree of crystal perfection. The method enables to resolve fine variations of the measured intensities and therefore is very efficient in the investigation of the structural parameters of single or multilayered epitaxial systems. In this article the method combining the standard HR technique with grazing incidence set-up is outlined. It is shown that in non-coplanar geometry the intensity distribution within the section of reciprocal space perpendicular to the sample surface, standardly scanned in coplanar geometry, can be measured at constant angle of incidence . For asymmetric diffractions that are not accessible in coplanar geometry the value of can be decreased to extremely low values close to zero making the method depth-sensitive. The effect of non-coplanar geometry on the angular resolution is analyzed and the possible application of scans in asymmetric non-coplanar geometry is discussed. The proposed scans are illustrated by measurements on selected GaN based epitaxial layers and they can be applied also to other types of epitaxial systems with medium crystal quality.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2018.07.009Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2018.07.009;
- PII
- S016943321831883X;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 461
- Journal Page Range
- p. 23-32
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 5. Progress in Applied Surface, Interface and Thin Film Science and Solar Renewable Energy News
- Acronym
- SURFINT-SREN V
- Dates
- 20-23 Nov 2017
- Place
- Florence (Italy)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54056058
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ASYMMETRY; EPITAXY; GALLIUM NITRIDES; LAYERS; MONOCRYSTALS; SURFACES; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SCATTERING
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier B.V. All rights reserved.