Published December 1988 | Version v1
Journal article Metadata-only

Total dose radiation characteristics of SOI MOSFETS fabricated using ISLANDS technology

Creators

  • 1. Semiconductor Process Lab., Texas Instruments Inc., Dallas, TX (USA)

Description

Total dose radiation results of n- and p-channel SOI MOSFETs fabricated using ISLANDS (oxidation of porous silicon) technology and subjected to /sup 60/Co gamma radiation are reported for the first time. The back-gates of both n- and p-channel transistors were hard to 1 Mrad(Si) with either -5 or 0 V on the substrate during irradiation. The build-up of radiation induced interface traps at the back-gate of n-channel MOSFETs compensated for the threshold voltage shift due to oxide trapped charges. Front-gate hardness was similar to that of bulk MOSFETs

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
35
Journal Issue
6
Series
IEEE Trans. Nucl. Sci.
Journal Page Range
1650-1652
ISSN
0018-9499
CODEN
IETNA

Conference

Title
25. annual conference on nuclear and space radiation effects.
Dates
12-15 Jul 1988.
Place
Portland, OR (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20053143
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE; S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COBALT 60; GAMMA RADIATION; MOSFET; OXIDATION; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; RADIATION HARDENING; SILICON; TRAPPING
Descriptors DEC
BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHEMICAL REACTIONS; COBALT ISOTOPES; ELECTROMAGNETIC RADIATION; ELEMENTS; FIELD EFFECT TRANSISTORS; HARDENING; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; MOS TRANSISTORS; NUCLEI; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TRANSISTORS; YEARS LIVING RADIOISOTOPES

Optional Information

Secondary number(s)
CONF-880730--.